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DMG1029SV
P-CHANNEL – Q2
0.8
0.8
0.7
0.6
V GS = -10V
0.7
0.6
V DS = -5.0V
T A = -55 ? C
T A = 25 ? C
0.5
0.4
0.3
V GS = -4.5V
V GS = -4.0V
V GS = -3.0V
0.5
0.4
0.3
T A = 85 ? C
T A = 125 ? C
T A = 150 ? C
0.2
0.2
0.1
V GS = -2.0V
V GS = -2.5V
0.1
0
0
1 2 3 4
-V DS , DRAIN -SOURCE VOLTAGE (V)
Fig. 9 Typical Output Characteristics
5
0
0
1 2 3 4
-V GS , GATE-SOURCE VOLTAGE (V)
Fig. 10 Typical Transfer Characteristics
5
8
7
6
8
7
6
5
V GS = -2.5V
5
4
4
I D = 100mA
3
2
1
V GS = -4.5V
V GS = -10V
3
2
1
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
-I D , DRAIN SOURCE CURRENT (A)
Fig. 11 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.8
0
0
2 4 6 8 10 12 14 16 18 20
V GS , GATE-SOURCE VOLTAGE (V)
Fig. 12 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
8
2.0
7
V GS = -4.5V
T A = 150 ? C
1.8
1.6
V GS = -5.0V
I D = -500mA
6
5
4
3
2
1
T A = 125 ? C
T A = 85 ? C
T A = 25 ? C
T A = -55 ? C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
V GS = -10V
I D = -500mA
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
-I D , DRAIN SOURCE CURRENT (A)
Fig. 13 Typical On-Resistance vs.
0.8
0
-50 -25 0 25 50 75 100 125 150
T J , JUNCTION TEMPERATURE ( ? C)
Fig. 14 On-Resistance Variation with Temperature
Drain Current and Temperature
DMG1029SV
Document number: DS35421 Rev. 3 - 2
6 of 9
www.diodes.com
August 2013
? Diodes Incorporated
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